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| APTGT50H120TG Full - Bridge Fast Trench + Field Stop IGBT(R) Power Module VBUS Q1 Q3 VCES = 1200V IC = 50A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant Max ratings 1200 75 50 100 20 277 100A @ 1150V Unit V A V W July, 2006 1-5 APTGT50H120TG - Rev 1 G1 G3 E1 Q2 OUT1 OUT2 Q4 E3 G2 G4 E2 NTC1 NTC2 E4 0/VBU S G3 E3 G4 E4 OUT2 VBUS 0/VBUS OUT1 E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT50H120TG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 50A Tj = 125C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit A V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 50A R G = 18 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 50A R G = 18 VGE = 15V Tj = 125C VBus = 600V IC = 50A Tj = 125C R G = 18 Min Typ 3600 190 160 90 30 420 70 90 50 520 90 5 Max Unit pF ns ns mJ 5.5 Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1200 Typ Max 250 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1200V IF = 50A 50 1.4 1.3 150 250 4.5 9 2.1 4.2 1.9 V ns July, 2006 2-5 APTGT50H120TG - Rev 1 IF = 50A VR = 600V di/dt =2000A/s C mJ www.microsemi.com APTGT50H120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.45 0.58 150 125 100 4.7 160 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To Heatsink M5 2500 -40 -40 -40 2.5 SP4 Package outline (dimensions in mm) ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT50H120TG - Rev 1 July, 2006 APTGT50H120TG Typical Performance Curve 100 80 TJ=125C Output Characteristics (VGE =15V) TJ=25C Output Characteristics 100 TJ = 125C VGE =17V VGE =13V VGE=15V 80 IC (A) 60 40 20 0 IC (A) 60 40 20 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 VGE =9V 0 1 2 V CE (V) 3 4 100 80 60 40 20 0 5 Transfert Characteristics 12 T J=25C TJ=125C Energy losses vs Collector Current VCE = 600V VGE = 15V RG = 18 TJ = 125C Eon 10 8 E (mJ) 6 4 IC (A) Eon Er Eoff TJ =125C 2 0 6 7 8 9 10 11 12 0 20 40 IC (A) 60 80 100 VGE (V) Switching Energy Losses vs Gate Resistance 12 10 8 E (mJ) 6 4 2 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 70 80 VCE = 600V VGE =15V IC = 50A T J = 125C Reverse Bias Safe Operating Area 120 Eon 100 80 Eoff IC (A) 60 40 20 0 0 300 600 900 V CE (V) 1200 1500 VGE =15V TJ=125C RG=18 Er maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 Thermal Impedance (C/W) 0.4 0.3 0.5 0.2 0.1 0.3 0.1 0.9 0.7 IGBT 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT50H120TG - Rev 1 July, 2006 APTGT50H120TG Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 IC (A) 60 70 80 hard switching ZVS ZCS VCE=600V D=50% RG=18 TJ =125C TC=75C Forward Characteristic of diode 150 125 100 IF (A) 75 50 25 0 0 0.5 1 1.5 VF (V) 2 2.5 T J=125C T J=25C T J=125C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.9 0.5 0.7 0.4 0.3 0.2 0.1 0.5 0.3 0.1 0.05 0.0001 0.001 Diode Single Pulse 0.01 0.1 1 10 0 0.00001 rectangular Pulse Duration (Seconds) Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT50H120TG - Rev 1 Microsemi reserves the right to change, without notice, the specifications and information contained herein July, 2006 |
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